IXKH 30N60C5 CoolMOS™ 1) Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D ID25 = 30 A VDSS = 600 V RDS(on) max = 0.
125 Ω TO-247 AD G G D S S q D(TAB) MOSFET Symbol VDSS VGS ID25 ID90 EAS EAR dV/dt Symbol TC = 25°C TC = 90°C single pulse repetitive ID = 11 A; TC = 25°C Conditions TVJ = 25°C Maximum Ratings 600 ± 20 30 21 708 1.
2 50 V V A A mJ mJ V/ns Features • fast CoolMOS™ 1) power MOSFET 4th generation - High blocking capability - Lowest resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness • Enhanced total power density Applications • Switched mode power supplies (SMPS)...

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