Part Number
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IXKH47N60C |
Manufacturer
|
IXYS |
Description
|
Power MOSFET |
Published
|
Sep 28, 2013 |
Detailed Description
|
IXKH 47N60C
CoolMOS™ 1) Power MOSFET
Low RDSon, high VDSS Superjunction MOSFET
D
VDSS = 600 V ID25 = 47 A RDS(on) max ...
|
Datasheet
|
IXKH47N60C
|
Overview
IXKH 47N60C
CoolMOS™ 1) Power MOSFET
Low RDSon, high VDSS Superjunction MOSFET
D
VDSS = 600 V ID25 = 47 A RDS(on) max = 70 mΩ
TO-247
G
G D S S
q
tab
E72873
MOSFET Symbol VDSS VGS ID25 ID100 EAS EAR dV/dt Symbol TC = 25°C TC = 100°C single pulse ID = 10 A; TC = 25°C repetitive ID = 20 A; TC = 25°C MOSFET dV/dt ruggedness VDS = 0.
.
.
480 V Conditions Conditions TVJ = 25°C Maximum Ratings 600 ± 20 47 30 1800 tbd tbd V V A A mJ mJ V/ns
Features • 3rd generation Superjunction power MOSFET - high blocking capability - lowest resistance - avalanche rated for unclamped inductive switching (UIS) - low thermal resistance due to reduced chip thickness Applications • Switched mode power supplies ...
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