|
Part Number
|
IXTN600N04T2 |
|
Manufacturer
|
IXYS |
|
Description
|
Power MOSFET |
|
Published
|
Sep 28, 2013 |
|
Detailed Description
|
TrenchT2TM GigaMOSTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXTN600N04T2
VDSS ID...
|
|
Datasheet
|
IXTN600N04T2
|
Overview
TrenchT2TM GigaMOSTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXTN600N04T2
VDSS ID25
= =
RDS(on) ≤
40V 600A 1.
3mΩ
miniBLOC, SOT-227 E153432
S
Symbol VDSS VDGR VGSM ID25 IL(RMS) IDM IA EAS PD TJ TJM Tstg TL TSOLD VISOL Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C (Chip Capability) External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C
Maximum Ratings 40 40 ±20 600 200 1800 200 3 940 -55 .
.
.
+175 175 -55 .
.
.
+175 V V V A A A A J W °C °C °C °C °C V~ V~ Nm/lb.
in.
Nm/lb.
in.
g
G
S D G = Gate S = Source D = Drain
Either Source Terminal S can be used as the Sourc...
Similar Datasheet