Part Number
|
IXTN62N50L |
Manufacturer
|
IXYS |
Description
|
Power MOSFET |
Published
|
Sep 28, 2013 |
Detailed Description
|
LinearTM Power MOSFET w/Extended FBSOA
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXTN62N50L
VDSS...
|
Datasheet
|
IXTN62N50L
|
Overview
LinearTM Power MOSFET w/Extended FBSOA
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXTN62N50L
VDSS ID25
RDS(on)
= 500V = 62A ≤ 100mΩ
miniBLOC E153432
S G
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg VISOL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C
Maximum Ratings 500 500 ± 30 ± 40 62 150 80 5 800 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A J W °C °C °C V~ V~ Nm/lb.
in.
Nm/lb.
in.
g Features
z z z
S D
G = Gate S = Source
D = Drain
Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Retur...
Similar Datasheet