Preliminary Datasheet RJK5032DPD 500V - 3A - MOS FET High Speed Power Switching Features  Low on-state resistance RDS(on) = 2.
1  typ.
(at ID = 1.
5 A, VGS = 10 V, Ta = 25C)  Low drive current  High speed switching R07DS0836EJ0200 Rev.
2.
00 Aug 08, 2012 Outline RENESAS Package code: PRSS0004ZG-A (Package name : MP-3A) 4 1.
2.
3.
4.
S D G 12 3 Gate Drain Source Drain Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal Impedance Channel temperature Storage ...

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