Preliminary Datasheet RJK6032DPD 600V - 3A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 3.
3  typ.
(at ID = 1.
5 A, VGS = 10 V, Ta = 25C)  Low drive current  High density mounting R07DS0837EJ0300 Rev.
3.
00 Oct 05, 2012 Outline RENESAS Package code: PRSS0004ZG-A (Package name : MP-3A) 4 1.
2.
3.
4.
S D G 12 3 Gate Drain Source Drain Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage tempe...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)