Part Number
|
P1004BD |
Manufacturer
|
UNIKC |
Description
|
N-Channel Enhancement Mode MOSFET |
Published
|
Sep 29, 2013 |
Detailed Description
|
P1004BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS 40V RDS(ON) 10mΩ @VGS = 10V ID 55A
TO-252 100% Rg te...
|
Datasheet
|
P1004BD
|
Overview
P1004BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS 40V RDS(ON) 10mΩ @VGS = 10V ID 55A
TO-252 100% Rg tested 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche Energy Power Dissipation Junction & Storage Temperature Range
2 1
SYMBOL VDS VGS
LIMITS 40 ±20 55 44 120 38 73 50 32 -55 to 150
UNITS V
TC = 25 ° C TC = 100 ° C
ID IDM IAS
A
L = 0.
1mH TC = 25 ° C TC = 70 ° C
EAS PD TJ, TSTG
mJ W ° C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient
1 2
SYMBOL RqJC RqJA
TYPICA...
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