TOSHIBA
Transistor Silicon
NPN Epitaxial Type
2SC6124
Power Amplifier Applications Power Switching Applications
2SC6124
Unit: mm
Low collector emitter saturation voltage : VCE (sat) = 0.
5 V (Max)
High-speed switching: tstg = 400 ns (Typ.
) Complementary to 2SA2206
(IC = 1 A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
DC Pulse
t = 10 s DC
VCBO VCEX VCEO VEBO
IC ICP IB PC (Note 1) Tj Tstg
160
V
160
V
80
V
7
V
2
A
4
A
0.
5
A
2.
5 W
1.
0
150
°C
−55 to 150 °C
1 : BASE 2 ...