2SC6125
TOSHIBA
Transistor Silicon
NPN Epitaxial Type
2SC6125
High-Speed Switching Applications Power Amplifier Applications
• High DC current gain: hFE = 180 to 390 (IC = 0.
5 A) • Low collector-emitter saturation: VCE (sat) = 0.
2 V (max) • High-speed switching: tf = 15 ns (typ.
) Unit : mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (Note 1) Base current Collector power dissipation (Note 2) Junction temperature Storage temperature range DC t = 10 s DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC PC Tj Tstg Rating 40 20 6 4 7 0.
4 1 2.
5 150 −55 to 150 Unit V V V A
JEDEC
A W °C °C
― SC-62 2-5K1A
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