2SC6133
TOSHIBA
Transistor Silicon
NPN Epitaxial Type
2SC6133
High-Speed Switching Applications DC-DC Converter Applications
Unit: mm
2.
1±0.
1 1.
7±0.
1 +0.
1 0.
3 -0.
05 3 0.
166±0.
05
• •
Low collector-emitter saturation voltage: VCE (sat) = 0.
12 V (max) High-speed switching: tf = 45 ns (typ.
)
2.
0±0.
1
•
High DC current gain: hFE = 400 to 1000 (IC = 0.
15A)
0.
65±0.
05 0.
7±0.
05
1 2
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation DC Pulse Symbol VCBO VCEX VCEO VEBO IC ICP IB PＣ (Note1) PＣ (Note2) Junction temperature Storage temperature...