Part Number
|
IRFHM830PBF |
Manufacturer
|
International Rectifier |
Description
|
Power MOSFET |
Published
|
Oct 21, 2013 |
Detailed Description
|
VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
RG (typical)
ID
(@Tc(Bottom) = 25°C)
30 V
3.8 mΩ 15 nC 2.5 Ω
40h A
Applicati...
|
Datasheet
|
IRFHM830PBF
|
Overview
VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
RG (typical)
ID
(@Tc(Bottom) = 25°C)
30 V
3.
8 mΩ 15 nC 2.
5 Ω
40h A
Applications • Battery Operated DC Motor Inverter MOSFET
IRFHM830PbF
HEXFET® Power MOSFET
3.
3mm x 3.
3mm PQFN
Features and Benefits
Features Low RDSon (3.
8mΩ) Low Thermal Resistance to PCB (3.
4°C/W) 100% Rg tested Low Profile (1.
0mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1,Industrial Qualification
Benefits Lower Conduction Losses
Enable better thermal dissipation Increased Reliability results in Increased Power Density
⇒ Multi-Vendor Compatibility
Easier Manufacturing Environmen...
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