Part Number
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IRF9952QPBF |
Manufacturer
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International Rectifier |
Description
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Power MOSFET |
Published
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Oct 23, 2013 |
Detailed Description
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PD - 96115
IRF9952QPbF
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Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET...
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Datasheet
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IRF9952QPBF
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Overview
PD - 96115
IRF9952QPbF
l l l l l l l l
Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free
HEXFET® Power MOSFET
S1 G1 S2 G2
N-CHANNEL MOSFET 1 8 2 3 4 7
D1 D1 D2 D2
N-Ch P-Ch VDSS 30V -30V
6 5
P-CHANNEL MOSFET
Top View
RDS(on) 0.
10Ω 0.
25Ω
Description
Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150°C junction operating t...
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