SMD Type
Silicon Power
Transistors 2SA1615-Z
TO-252
+0.
15 1.
50 -0.
15
Transistors
Unit: mm 2.
30
+0.
8 0.
50-0.
7 +0.
1 -0.
1
6.
50 +0.
2 5.
30-0.
2
+0.
15 -0.
15
Features
Large current capacity.
+0.
2 9.
70 -0.
2
High hFE and low collector saturation voltage.
+0.
1 0.
80-0.
1
+0.
15 0.
50 -0.
15
0.
127 max
2.
3
+0.
15 4.
60-0.
15
+0.
1 0.
60-0.
1
+0.
28 1.
50 -0.
1
+0.
25 2.
65 -0.
1
+0.
15 5.
55 -0.
15
1 Base 2 Collector 3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current pulse Base current Total power dissipation Junction temperature Storage temperature * PW 10 ms, duty cycle 50% Symbol VCBO VCEO VEBO IC I...