isc Silicon
PNP Power
Transistor
2SB855
DESCRIPTION ·Collector Current: IC= -2A ·Low Collector Saturation Voltage
: VCE(sat)= -1.
2V(Max)@IC= -2A ·High Collector Power Dissipation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-50
V
VCEO Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-4
V
IC
Collector Current-Continuous
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
-2
A
20
W
150
℃
Tstg
Storage Temperature Range
-45~150 ℃
isc website：www.
iscse...