Part Number
|
AP9997GP |
Manufacturer
|
Advanced Power Electronics |
Description
|
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
Published
|
Oct 26, 2013 |
Detailed Description
|
AP9997GP
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast ...
|
Datasheet
|
AP9997GP
|
Overview
AP9997GP
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic G
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
100V 120mΩ 11A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial through-hole applications.
G
D
TO-220(P)
S
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous D...
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