Part Number
|
IXFT17N80Q |
Manufacturer
|
IXYS |
Description
|
HiPerFET Power MOSFET |
Published
|
Oct 27, 2013 |
Detailed Description
|
HiPerFETTM Power MOSFETs
Q-Class
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg
IXFH 17N80Q IXFT 17N80Q...
|
Datasheet
|
IXFT17N80Q
|
Overview
HiPerFETTM Power MOSFETs
Q-Class
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg
IXFH 17N80Q IXFT 17N80Q
VDSS ID25 RDS(on)
= 800 V = 17 A = 0.
60 Ω
trr ≤ 250 ns
Preliminary Data Sheet
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
Maximum Ratings 800 800 ± 20 ± 30 17 68 17 30 1.
0 5 400 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A mJ J V/ns W °C °C °C °C g g
TO-268 (D3) (IXFT) Case Style
G S
(TAB)
TO-24...
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