Power
Transistors
2SB1179, 2SB1179A
Silicon
PNP epitaxial planar type darlington
For power amplification and switching Complementary to 2SD1749, 2SD1749A ■ Features
• High forward current transfer ratio hFE which has satisfactory linearity • High-speed switching • I type package enabling direct soldering of the radiating fin to the printed circuit board, etc.
of small electronic equipment
12.
6±0.
3 7.
2±0.
3
Unit: mm
7.
0±0.
3 3.
0±0.
2 2.
0±0.
2 3.
5±0.
2
0˚ to 0.
15˚
2.
5±0.
2
(1.
0)
(1.
0)
1.
1±0.
1
1.
0±0.
2
■ Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) 2SB1179 2SB1179A VCEO VEBO IC ICP PC Tj Tstg Ta = 25°C Junction temperature Storage temperature Symbol VCBO Ra...