DF N2 020 -6
PBSS4130PAN
11 January 2013
30 V, 1 A
NPN/
NPN low VCEsat (BISS)
transistor
Product data sheet
1.
General description
NPN/
NPN low VCEsat Breakthrough In Small Signal (BISS)
transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
NPN/
PNP complement: PBSS4130PANP.
PNP/
PNP complement: PBSS5130PAP.
2.
Features and benefits
• • • • • •
Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements High energy efficiency due to less heat generation AEC-Q101 qualified
3.
Applications
• • • • •
Load switch Bat...