SMD Type
NPN Silicon Epitaxial
Transistor 2SC1654
SOT-23
+0.
1 2.
9-0.
1 +0.
1 0.
4-0.
1
Transistors IC
Unit: mm
+0.
1 2.
4-0.
1
High voltage VCEO : 160V
+0.
1 1.
3-0.
1
High DC current gain.
hFE=130 typ.
(VCE=3.
0V,IC=15mA)
1
+0.
1 0.
95-0.
1 +0.
1 1.
9-0.
1
2
0.
55
0.
4
Features
3
+0.
05 0.
1-0.
01
+0.
1 0.
97-0.
1
1.
Base 2.
Emitter 3.
collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PD Tj Tstg Rating 180 160 5 50 150 125 -55 to +125 Unit V V V mA mW
Electrical Characteristics Ta = 25
Parameter Collector cutoff current Emitter cut...