INCHANGE Semiconductor
isc RF Product Specification
isc Silicon
NPN RF
Transistor
2SC3122
DESCRIPTION ·High Gain: Gpe= 24dB TYP.
@ f= 200MHz ·Low Noise: NF= 2.
0dB TYP.
@ f= 200MHz
APPLICATIONS ·Designed for TV VHF RF amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
30
V
VCEO
Collector-Emitter Voltage
30
V
VEBO
Emitter-Base Voltage
3
V
IC
Collector Current-Continuous
20
mA
IB
B
Base Current-Continuous
10
mA
PC
Collector Power Dissipation @TC=25℃
0.
15
W
TJ
Junction Temperature
125
℃
Tstg
Storage Temperature Range
-55~125
℃
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