INCHANGE Semiconductor
isc RF Product Specification
isc Silicon
NPN RF
Transistor
2SC3127
DESCRIPTION ·Low Noise and High Gain NF = 2.
2 dB TYP.
@VCE = 5 V, IC = 5 mA, f = 900 MHz PG = 10.
5 dB TYP.
@VCE = 5 V, IC = 20 mA, f = 900 MHz
APPLICATIONS ·Designed for use in low-noise and small signal amplifiers from VHF ~ UHF band.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
20
V
VCEO
Collector-Emitter Voltage
12
V
VEBO
Emitter-Base Voltage
3
V
IC
Collector Current-Continuous
50
mA
PC
Collector Power Dissipation @TC=25℃
0.
15
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website：www.
iscsemi.
...