SMD Type
Silicon
NPN Epitaxial 2SC3326
SOT-23
+0.
1 2.
9-0.
1 +0.
1 0.
4-0.
1
Transistors IC
Unit: mm
+0.
1 2.
4-0.
1
High emitter-base voltage: VEBO = 25 V (min).
High reverse hFE: Reverse hFE = 150 (typ.
) (VCE = -2 V, IC = -4 mA).
Low on resistance: RON = 1 (typ.
) (IB = 5 mA).
+0.
1 1.
3-0.
1
Features
1
+0.
1 0.
95-0.
1 +0.
1 1.
9-0.
1
2
0.
55
0.
4
3
+0.
05 0.
1-0.
01
Small package.
+0.
1 0.
38-0.
1
+0.
1 0.
97-0.
1
High DC current gain: hFE = 200 1200.
1.
Base 2.
Emitter 3.
collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symb...