isc Silicon
NPN RF
Transistor
DESCRIPTION ·Low Noise
NF = 1.
5dB TYP @ VCE=10V，IC=7mA， f=1GHz •High Power Gain ︱S21e︱2 = 9.
5dB TYP @ VCE=10V，IC=20mA，f=1GHz ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·The 2SC3355 is an
NPN silicon epitaxial
transistor
designed for low noise amplifier at VHF, UHF and CATV band.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
20
V
VCEO
Collector-Emitter Voltage
12
V
VEBO
Emitter-Base Voltage
3
V
IC
Collector Current-Continuous
Pc
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
100
mA
500
mW
150
℃
Tstg
Storage Temperature Ran...