Part Number
|
2SC3357 |
Manufacturer
|
Renesas |
Description
|
NPN EPITAXIAL SILICON RF TRANSISTOR |
Published
|
Oct 29, 2013 |
Datasheet
|
2SC3357
|
Features
• Low noise and high gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @ VCE = 10 V, IC = 40 mA, f = 1 GHz
• High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz
• Large Ptot : Ptot = ...
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