SMD Type
Silicon
NPN Epitaxial 2SC4213
Features
High emitter-base voltage: VEBO = 25 V (min).
High reverse hFE: Reverse hFE = 150 (typ.
) (VCE = -2 V, IC = -4 mA).
Low on resistance: RON = 1Ù (typ.
) (IB = 5 mA).
High DC current gain: hFE = 200 1200.
Small package.
Transistors IC
1 Emitter 2 Base 3 Collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 50 20 25 300 60 100 125 -55 to +125 Unit V V V mA mA mW
Electrical Characteristics Ta = 25
Parameter Collector cut-off current Em...