AON6405L P-Channel Enhancement Mode Field Effect
Transistor
General Description
The AON6405L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is ideal for load switch and battery protection applications.
Features
VDS (V) = -30V (VGS = -10V) ID = -30A RDS(ON) 7mΩ (VGS = -10V) RDS(ON) 8mΩ (VGS = -4.
5V) ESD Protected! 100% UIS Tested!
-RoHS Compliant -Halogen Free
Top View Fits SOIC8 footprint !
S S S G D D D D G
Rg
D
DFN5X6 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain G Current Pulsed Drain Current Continuous Drain Current A...