TK20D60U
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (DTMOSⅡ)
TK20D60U
Switching
Regulator Applications
• • • • Low drain-source ON-resistance: RDS (ON) = 0.
165Ω (typ.
) High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.
) Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement mode: Vth = 3.
0 to 5.
0 V (VDS = 10 V, ID = 1 mA)
10.
0 ± 0.
3 9.
5 ± 0.
2 A Ф3.
65 ± 0.
2 3.
2 2.
8
Unit: mm
0.
6±0.
1
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Gate-source voltage DC Drain current (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 ±30 20 40 190 144 20 19 150 −55 to 150 A W mJ A mJ °C °C Unit
1.
1 ± 0.
15 2.
8 MAX.
12.
8 ± 0.
5 4.
5 ± 0.
2
9.
0 0...