TK20J50D
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (π-MOS VII)
TK20J50D
Switching
Regulator Applications
• Low drain-source ON-resistance: RDS (ON) = 0.
22 Ω (typ.
) • High forward transfer admittance: |Yfs| = 8.
5 S (typ.
) • Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) • Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA)
2.
0
1.
0
15.
9 MAX.
Unit: mm
Ф3.
2 ± 0.
2
4.
5
20.
0 ± 0.
3
9.
0
2.
0
3.
3 MAX.
20.
5 ± 0.
5
Absolute Maximum Ratings (Ta = 25°C)
2.
0 ± 0.
3
1.
0
+0.
3 -0.
25
Characteristics
Symbol
Rating
Unit
5.
45 ± 0.
2
5.
45 ± 0.
2
2.
8 4.
8 MAX.
1.
8 MAX.
+0.
3
0.
6 -0.
1
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1) Pulse (Note 1...