Part Number
|
NE5550779A |
Manufacturer
|
Renesas |
Description
|
Silicon Power LDMOS FET |
Published
|
Nov 10, 2013 |
Detailed Description
|
Data Sheet
NE5550779A
Silicon Power LDMOS FET
FEATURES
• • • • •
R09DS0040EJ0300 Rev.3.00 Mar 12, 2013
High Output Po...
|
Datasheet
|
NE5550779A
|
Overview
Data Sheet
NE5550779A
Silicon Power LDMOS FET
FEATURES
• • • • •
R09DS0040EJ0300 Rev.
3.
00 Mar 12, 2013
High Output Power : Pout = 38.
5 dBm TYP.
(VDS = 7.
5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm) High power added efficiency : ηadd = 66% TYP.
(VDS = 7.
5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm) High Linear gain : GL = 22.
0 dB TYP.
(VDS = 7.
5 V, IDset = 140 mA, f = 460 MHz, Pin = 10 dBm) High ESD tolerance Suitable for VHF to UHF-BAND Class-AB power amplifier.
APPLICATIONS
• 150 MHz Band Radio System • 460 MHz Band Radio System • 900 MHz Band Radio System
ORDERING INFORMATION
Part Number NE5550779A Order Number NE5550779A-A Package 79A (Pb-Free) Marking W8 Supplying Form
• 12 mm...
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