Ordering number : ENA1388 RD2006LS-SB SANYO Semiconductors DATA SHEET RD2006LS-SB Features • • • • • Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode High breakdown voltage (VRRM=600V).
High reliability.
Easy to be mounted, good heat dissipation.
Fast reverse recovery time.
Low noise at the time of reverse recovery.
Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Average Output Current Peak Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM Conditions Ratings 600 20 PW≤100μs, duty≤50% Sine wave, 10ms 1pulse 80 180 150 --55 to +150 Unit V A A A °C °C IO IOP IFSM Tj Tstg Electrical Chara...

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