P0550AD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 500V RDS(ON) 1.
5Ω @VGS = 10V ID 5A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current2 Pulsed Drain Current Avalanche Current Avalanche Energy Power Dissipation 1,2 SYMBOL VDS VGS LIMITS 500 ±30 5 3 15 5 128 89 36 -55 to 150 UNITS V TC = 25 ° C TC = 100 ° C ID IDM IAS A L = 10mH TC = 25 ° C TC = 100 ° C EAS PD TJ, TSTG mJ W ° C Operating Junction & Storage Temperature Range THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1 2 SYMBOL RqJC RqJA TYPICAL MAXIMUM 1.
4 62.
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