DF N1 01
PMXB65ENE
24 September 2013
0D -3
30 V, N-channel Trench MOSFET
Product data sheet
1.
General description
N-channel enhancement mode Field-Effect
Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Features and benefits
• • • • •
Trench MOSFET technology Leadless ultra small and thin SMD plastic package: 1.
1 × 1.
0 × 0.
37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection 1 kV Very low Drain-Source on-state resistance RDSon = 44 mΩ
3.
Applications
• • • •
Low-side load switch and charging switch for portable devices Power management in battery...