MOSFETs Silicon N-channel MOS (U-MOS)
TK100F06K3
1.
Applications
• Switching Voltage
Regulators • DC-DC Converters • Motor Drivers
2.
Features
(1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 4.
0 mΩ (typ.
) (VGS = 10 V) (3) High forward transfer admittance: |Yfs| = 174 S (typ.
) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (5) Enhancement mode: Vth = 3.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA)
3.
Packaging and Internal Circuit
TK100F06K3
TO-220SM(W)
1: Gate 2: Drain (Heatsink) 3: Source
©2020 Toshiba Electronic Devices & Storage Corporation
1
Start of commercial production
2008-03
2020-06-12 Rev.
2.
0
TK100F06K3
4.
Absolute Maximum Ratings (Note) (Ta = 25 unles...