Part Number
|
TPCF8105 |
Manufacturer
|
Toshiba |
Description
|
Field Effect Transistor |
Published
|
Nov 11, 2013 |
Detailed Description
|
TPCF8105
MOSFETs Silicon P-Channel MOS (U-MOS)
TPCF8105
1. Applications
• • Lithium-Ion Secondary Batteries Power Mana...
|
Datasheet
|
TPCF8105
|
Overview
TPCF8105
MOSFETs Silicon P-Channel MOS (U-MOS)
TPCF8105
1.
Applications
• • Lithium-Ion Secondary Batteries Power Management Switches
2.
Features
(1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 24 mΩ (typ.
) (VGS = -4.
5 V) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) Enhancement mode: Vth = -0.
5 to -1.
2 V (VDS = -10 V, ID = -0.
5 mA)
3.
Packaging and Internal Circuit
5: Source 4: Gate 1, 2, 3, 6, 7, 8: Drain
VS-8
4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation Si...
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