Part Number
|
TPH8R80ANH |
Manufacturer
|
Toshiba |
Description
|
Field Effect Transistor |
Published
|
Nov 11, 2013 |
Datasheet
|
TPH8R80ANH
|
Features
(1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 13 nC (typ.) Low drain-source on-resistance: RDS(ON) = 7.4 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = ...
Similar Datasheet