|
Part Number
|
TPN4R203NC |
|
Manufacturer
|
Toshiba |
|
Description
|
Field Effect Transistor |
|
Published
|
Nov 11, 2013 |
|
Detailed Description
|
TPN4R203NC
MOSFETs Silicon N-channel MOS (U-MOS)
TPN4R203NC
1. Applications
• • Lithium-Ion Secondary Batteries Power ...
|
|
Datasheet
|
TPN4R203NC
|
Overview
TPN4R203NC
MOSFETs Silicon N-channel MOS (U-MOS)
TPN4R203NC
1.
Applications
• • Lithium-Ion Secondary Batteries Power Management Switches
2.
Features
(1) (2) (3) (4) Small, thin package Low drain-source on-resistance: RDS(ON) = 3.
5 mΩ (typ.
) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.
3 to 2.
3 V (VDS = 10 V, ID = 0.
2 mA)
3.
Packaging and Internal Circuit
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
TSON Advance
4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation Power ...
Similar Datasheet