Part Number
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TC58NVG6DDJTA00 |
Manufacturer
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Toshiba |
Description
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64 GBIT (8G X 8 BIT) CMOS NAND E2PROM |
Published
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Nov 18, 2013 |
Detailed Description
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TOSHIBA CONFIDENTIAL
TENTATIVE
TC58NVG6DDJTA00
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
2
64 GBIT (8G...
|
Datasheet
|
TC58NVG6DDJTA00
|
Overview
TOSHIBA CONFIDENTIAL
TENTATIVE
TC58NVG6DDJTA00
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
2
64 GBIT (8G × 8 BIT) CMOS NAND E PROM (Multi-Level-Cell) DESCRIPTION
The TC58NVG6DD is a single 3.
3 V 64 Gbit (77,054,607,360 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (16384 + 1280) bytes × 256 pages × 2130 blocks.
The device has two 17664-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 17664-byte increments.
The Erase operation is implemented in a single block unit (4 Mbytes + 320 Kbytes: 17664 bytes × 256 pages).
The TC58NVG6DD is a serial-type memory devi...
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