TOSHIBA CONFIDENTIAL TENTATIVE TC58NVG5T2HTA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 32 GBIT (4G  8 BIT) CMOS NAND E PROM (Triple-Level-Cell) DESCRIPTION The TC58NVG5T2HTA00 is a single 3.
3 V 32 Gbit (40,478,441,472 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (8192  1024) bytes  516 pages  1064 blocks.
The device has one 9216-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 9216-byte increments.
The Erase operation is implemented in a single block unit (4128 Kbytes  516 Kbytes:9216 bytes  516 pages).
The TC58NVG5T2HTA00 is a serial-type me...

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