Part Number
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TC58NVG2D4BFT00 |
Manufacturer
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Toshiba |
Description
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4 GBIT (512M X 8 BIT) CMOS NAND E2PROM |
Published
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Nov 18, 2013 |
Detailed Description
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TOSHIBA CONFIDENTIAL
TENTATIVE
TC58NVG2D4BFT00
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
2
4 GBIT (512...
|
Datasheet
|
TC58NVG2D4BFT00
|
Overview
TOSHIBA CONFIDENTIAL
TENTATIVE
TC58NVG2D4BFT00
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
2
4 GBIT (512M × 8 BIT) CMOS NAND E PROM (Multi Level Cell) DESCRIPTION
The TC58NVG2D4B is a single 3.
3 V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 128 pages × 2048 blocks.
The device has two 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments.
The Erase operation is implemented in a single block unit (256 Kbytes + 8 Kbytes: 2112 bytes × 128 pages).
The TC58NVG2D4B is a serial-type memory device wh...
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