TOSHIBA CONFIDENTIAL TENTATIVE TC58NVG5D2FTAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 32 GBIT (4G × 8 BIT) CMOS NAND E PROM (Multi-Level-Cell) DESCRIPTION The TC58NVG5D2 is a single 3.
3 V 32 Gbit (36,274,176,000 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (8192 + 448) bytes × 128 pages × 4100 blocks.
The device has two 8640-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 8640-byte increments.
The Erase operation is implemented in a single block unit (1 Mbytes + 56 Kbytes: 8640 bytes × 128 pages).
The TC58NVG5D2 is a serial-type memory device whi...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)