NTD4865N Power MOSFET 25 V, 44 A, Single N-Channel, DPAK/IPAK Features •ăTrench Technology •ăLow RDS(on) to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices Applications http://onsemi.
com V(BR)DSS 25 V RDS(ON) MAX 10.
9 mW @ 10 V 17.
2 mW @ 4.
5 V D ID MAX 44 A •ăVCORE Applications •ăDC-DC Converters •ăHigh/Low Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drai...

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