TK6P53D
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK6P53D
Switching
Regulator Applications
Unit: mm
1.
08±0.
2
• Low drain-source ON-resistance: RDS (ON) = 1.
1 Ω (typ.
) • High forward transfer admittance: ⎪Yfs⎪ = 2.
5 S (typ.
) • Low leakage current: IDSS = 10 μA (max) (VDS = 525 V) • Enhancement-mode: Vth = 2.
4 to 4.
4 V (VDS = 10 V, ID = 1 mA)
6.
6 ± 0.
2 5.
34 ± 0.
13
0.
58MAX
6.
1 ± 0.
12 +0.
4
10.
0 −0.
6
1.
01MAX
Absolute Maximum Ratings (Ta = 25°C)
2.
3 ± 0.
1 0.
07 ± 0.
07
+0.
25 1.
52 −0.
12
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms) (Note 1)
Drain power dissipation (Tc = 25°C)
Single ...