Freescale Semiconductor ‘ Technical Data
Document Number: MRFE6S8046N Rev.
0, 5/2009
RF Power Field Effect
Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 864 to 894 MHz.
Suitable for CDMA and multicarrier amplifier applications.
• Typical GSM Performance: VDD = 28 Volts, IDQ = 300 mA, Pout = 35.
5 Watts CW
Frequency 864 MHz 880 MHz 894 MHz Gps (dB) 19.
9 20 19.
8 hD (%) 58.
7 58.
5 57.
7
MRFE6S8046NR1 MRFE6S8046GNR1
864 - 894 MHz, 35.
5 W CW, 28 V GSM, GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs
• Capable of Handling 5:1 VSWR, @ 32 Vdc, 880 MHz, 70 Watts CW Output Power (3 dB Input Overdrive from Rated ...