IRFW610B / IRFI610B
November 2001
IRFW610B / IRFI610B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.
Features
• • • • • • 3.
3A, 200V, RDS(on) = 1.
5Ω @VGS = 10 V Low gate charge ( typical 7.
2 nC) Low...