SMD Type
MOS Field Effect
Transistor KPA1890
IC IC
Features
Can be driven by a 4.
0-V power source Low on-state resistance N-channel RDS(on)1 = 27 m RDS(on)2 = 37 m RDS(on)3 = 47 m P-channel RDS(on)1 = 37 m RDS(on)2 = 56 m RDS(on)3 = 64 m MAX.
(VGS = 10 V, ID = 3.
0 A) MAX.
(VGS = 4.
5 V, ID = 3.
0 A) MAX.
(VGS = 4.
0 V, ID = 3 A) MAX.
(VGS = -10 V, ID = -2.
5 A) MAX.
(VGS = -4.
5 V, ID = -2.
5 A) MAX.
(VGS = -4.
0 V, ID = -2.
5 A)
TSSOP-8
Unit: mm
1
:Drain1
5
:Gate2
2, 3 :Source1
6, 7 :Source2 8 :Drain2
Built-in G-S protection diode against ESD
4
:Gate1
Absolute Maximum Ratings Ta = 25
Parameter Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Dra...