SMD Type
MOS Field Effect
Transistor KPA1871
IC IC
Features
Can be driven by a 2.
5-V power source Low on-state resistance RDS(on)1 = 26 m RDS(on)2 = 27 m RDS(on)3 = 38 m TYP.
(VGS = 4.
5 V, ID = 3.
0 A) TYP.
(VGS = 4.
0 V, ID = 3.
0 A) TYP.
(VGS = 2.
5 V, ID = 3.
0 A)
TSSOP-8
Unit: mm
Built-in G-S protection diode against ESD
1 : Drain1 2 : Source1 3 : Source1 4 : Gate1
5 : Gate2 6 : Source2 7 : Source2 8 : Drain2
Absolute Maximum Ratings Ta = 25
Parameter Drain to Source Voltage (VGS = 0) Gate to Source Voltage (VDS = 0) Drain Current (DC) Drain Current (Pulse) *1 Total Power Dissipation *2 Channel Temperature Storage Temperature *1 PW 10 s, Duty cycle 1% Symbol VDSS VGSS ID(DC) ID(pulse) PT...