SMD Type
MOS Field Effect
Transistor KPA1793
Features
Low on-state resistance N-channel RDS(on)1 = 69 m RDS(on)2 = 72 m RDS(on)3 = 107 m P-channel RDS(on)1 = 115 m RDS(on)2 = 120 m RDS(on)3 = 190 m Low input capacitance N-channel Ciss = 160 pF TYP.
P-channel Ciss = 370 pF TYP.
Built-in gate protection diode Small and surface mount package MAX.
(VGS = 10 V, ID = 1.
5 A) MAX.
(VGS = 4.
0 V, ID = 1.
5 A) MAX.
(VGS = 2.
5 V, ID = 1.
0 A) MAX.
(VGS = -4.
5 V, ID = -1.
5 A) MAX.
(VGS = -4.
0 V, ID = -1.
5 A) MAX.
(VGS = -2.
5 V, ID = -1.
0 A)
IC IC
Absolute Maximum Ratings Ta = 25
Parameter Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) *1 To...