SMD Type
MOS Field Effect
Transistor KPA2790GR
Features
Low on-state resistance N-channel RDS(on)1 = 28 m RDS(on)2 = 40 m P-channel RDS(on)1 = 60 m RDS(on)2 = 80 m Low input capacitance N-channel Ciss = 500 pF TYP.
P-channel Ciss = 460 pF TYP.
Built-in gate protection diode Small and surface mount package MAX.
(VGS = 10 V, ID = 3 A) MAX.
(VGS = 4.
5 V, ID = 3 A) MAX.
(VGS = -10 V, ID = -3 A) MAX.
(VGS = -4.
5 V, ID = -3 A)
IC IC
Absolute Maximum Ratings Ta = 25
Parameter Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) *1 Total Power Dissipation (1 unit) *2 Total Power Dissipation (2 units) *2 Channel Temperature Storage Temperat...