BSB019N03LX G OptiMOSTM2 Power-MOSFET Features • Pb-free plating; RoHS compliant • Dual sided cooling • Low profile (0.
7 mm) • Avalanche rated • Qualified for consumer level application • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Optimized for high switching frequency DC/DC converter • Low parasitic inductance Product Summary V DS R DS(on),max ID 30 1.
9 174 V mΩ A MG-WDSON-2 • Compatible with DirectFET® package MX footprint and outline 1) Type BSB019N03LX G 2) Package MG-WDSON-2 Outline MX Marking 1003 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C V GS=1...

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