Part Number
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BSB028N06NN3G |
Manufacturer
|
Infineon |
Description
|
n-Channel Power MOSFET |
Published
|
Dec 10, 2013 |
Detailed Description
|
BSB028N06NN3 G
OptiMOS™3 Power-MOSFET
Features • Optimized technology for DC/DC converters • Excellent gate charge x R ...
|
Datasheet
|
BSB028N06NN3G
|
Overview
BSB028N06NN3 G
OptiMOS™3 Power-MOSFET
Features • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • Dual sided cooling • low parasitic inductance
Product Summary VDS RDS(on),max ID
60 2.
8 90
CanPAKTM M MG-WDSON-2
• Low profile (0.
7mm)
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Compatible with DirectFET® package MN footprint and outline2)
V mW A
Type BSB028N06NN3 G
Package MG-WDSON-2
Outline MN
Marking 0106
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Conti...
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